Title :
Breakdown mechanisms and stress-induced leakage current in ultra-thin oxides and N2O oxynitrides
Author :
Chou, Anthony I. ; Lai, Kafai ; Kumar, Gran ; Chowdhury, Prasenjit ; Hao, Ming-Yin ; Chen, Wei-Ming ; Gardner, Michael ; Fulford, J. ; Lee, Jack C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Abstract :
In this paper, we investigate breakdown mechanisms and stress-induced leakage current (SILC) for conventional thermal oxides and N2O oxynitrides. The role of hole generation and trapping in the breakdown of both thermal oxides and oxynitrides is studied in samples with thicknesses ranging from 33-87 Å. SILC characteristics of these dielectrics thicknesses are scaled downwards; instead there is a “turnaround” near a thickness of 50 Å
Keywords :
dielectric thin films; electric breakdown; hole traps; leakage currents; N2O; SiO2; SiON; breakdown; dielectrics; hole generation; hole trapping; oxynitrides; stress-induced leakage current; thermal oxides; ultra-thin films; Dielectric breakdown; Dielectric devices; Dielectric measurements; Dielectric substrates; Electric breakdown; Leakage current; Lifting equipment; Microelectronics; Thermal stresses; Tunneling;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1995., Proceedings of the Eleventh Biennial
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-2596-6
DOI :
10.1109/UGIM.1995.514122
