Title :
Numerical analysis of intrinsic capacitances for a fully depleted SOI MOSFET
Author :
Yang, Ping-Chang ; Liu, Patrick S.
Author_Institution :
Feng Chia University
Keywords :
Art; Capacitance; Capacitors; Electrons; Equivalent circuits; MOSFET circuits; Numerical analysis; Numerical simulation; Silicon on insulator technology; Voltage;
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
DOI :
10.1109/EDMS.1994.863895
