DocumentCode :
2349653
Title :
Prediction of harmonic tuning performance in pHEMTs
Author :
Varanasi, Ravi K. ; Baylis, Charles P. ; Dunleavy, Lawrence P. ; Clausen, William
Author_Institution :
Harris Corp., Melbourne, FL, USA
fYear :
2005
fDate :
2005
Abstract :
This paper focuses on the characterization and optimization of microwave power transistors using a commercial on-wafer harmonic load pull system. Specific attention is paid to the output tuning of the second harmonic impedance presented to the device. The ability to quantify the level of accuracy in a load pull system is explored by using various calibration validation methods. Experiments and simulation comparisons are described for a GaAs pHEMT and a GaAs HJFET. The measured harmonic load pull data pointed to different guidance on how one would match the 2nd harmonic for best performance.
Keywords :
III-V semiconductors; circuit optimisation; circuit tuning; gallium arsenide; harmonics; microwave field effect transistors; microwave power transistors; power HEMT; GaAs; GaAs HJFET; GaAs pHEMT; calibration validation methods; commercial on-wafer harmonic load pull system; harmonic tuning performance; microwave power transistors; second harmonic impedance; Calibration; Gallium arsenide; Impedance; Microwave devices; PHEMTs; Postal services; Power system modeling; Power transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Wireless and Microwave Technology, 2005. WAMICON 2005. The 2005 IEEE Annual Conference
Print_ISBN :
0-7803-8861-5
Type :
conf
DOI :
10.1109/WAMIC.2005.1528372
Filename :
1528372
Link To Document :
بازگشت