Title :
Strain reduction in Silicon-on-Sapphire by wafer bonding
Author :
Imthurn, G.P. ; Miscione, A.M. ; Landry, K. ; Vaufredaz, A. ; Barge, T. ; Lagahe-Blanchard, C.
Author_Institution :
Peregrine Semicond. Corp., San Diego, CA, USA
Abstract :
Though Silicon-on-Sapphire (SOS) has many applications for RF circuits, compressive strain in the hetero epitaxially deposited silicon film reduces the electron mobility and diminishes its high-frequency performance. To eliminate this strain, we bonded silicon films to sapphire. There has been limited work done on Bonded SOS (BSOS) up until this time. The current work has provided a mass-produced SOI technology that has device performance exceeding that of incumbent RF technologies. The BSOS films show 56% higher electron mobility than SOS and RF switch performance better than GaAs PHEMT´s.
Keywords :
CMOS integrated circuits; electron mobility; elemental semiconductors; radiofrequency integrated circuits; semiconductor thin films; silicon; silicon-on-insulator; wafer bonding; BSOS films; CMOS process; GaAs PHEMT; RF circuits; Si; bonded SOS; compressive strain; electron mobility; heteroepitaxially deposited silicon film; mass-produced SOI technology; silicon-on-sapphire; strain reduction; wafer bonding; Films; Logic gates; Rough surfaces; Silicon; Strain; Stress; Surface roughness;
Conference_Titel :
SOI Conference (SOI), 2011 IEEE International
Conference_Location :
Tempe, AZ
Print_ISBN :
978-1-61284-761-0
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2011.6081706
