• DocumentCode
    2349664
  • Title

    Improvement in radiation hardness of n-MOSFET´s with gate oxides prepared by multiple N2O annealings

  • Author

    Wu, You-Lin ; Kuo, Kang-Min ; Hwu, Jenn-Gwo

  • Author_Institution
    National Tailwan University
  • fYear
    1994
  • fDate
    1994
  • Keywords
    Capacitive sensors; Fabrication; MOSFET circuits; Nitrogen; Rapid thermal annealing; Semiconductor films; Silicon compounds; Thermal degradation; Thermal engineering; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
  • Type

    conf

  • DOI
    10.1109/EDMS.1994.863900
  • Filename
    863900
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2349664