Title :
The effect of implant dose rates and two step anneals on p+ -n ultra-shallow junctions
Author :
Sultan, A. ; Craig, M. ; Reddy, K. ; Banerjee, S. ; Ishida, E. ; Maillot, P. ; Larson, L.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
Ultra-shallow junctions are obtained using low energy BF2 (5 keV) implants in crystalline Si. The variation in junction depth as a function of dose rate and two-step anneals is studied for doses of 1×1014 and 1×1015 cm-2 . B diffusion is retarded in the tail region for the higher dose rates and consequently the junction depth decreases as compared to the lower dose rates. Junction depth is further reduced for the two-step anneals as compared to the single-step RTA
Keywords :
annealing; boron compounds; diffusion; elemental semiconductors; ion implantation; p-n junctions; rapid thermal annealing; silicon; 5 keV; B diffusion; RTA; Si:BF2; crystalline Si; implant dose rate; p+-n ultra-shallow junctions; two step anneal; Amorphous materials; Crystallization; Current density; Hoses; Ion implantation; Microelectronic implants; Rapid thermal annealing; Tail; Temperature; Very large scale integration;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1995., Proceedings of the Eleventh Biennial
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-2596-6
DOI :
10.1109/UGIM.1995.514126
