• DocumentCode
    2349688
  • Title

    A new methodology for fast development of multilevel metallization for ULSI technology

  • Author

    Islam Raja, M. ; El-Ghor, Mohamed ; Yin, David ; Pollack, Gordon

  • Author_Institution
    Semicond. Process & Design Center, Texas Instrum. Inc., Dallas, TX, USA
  • fYear
    1995
  • fDate
    16-17 May 1995
  • Firstpage
    113
  • Lastpage
    117
  • Abstract
    A methodology has been developed for fast process development and integration of multilevel metallization systems for ultra large scale integration technology. This methodology defines a set of primitive processes, which are then arranged in the required configuration to build or develop multilevel metallization systems. Each primitive process will have a predictive model and process control and calibration strategy including a set of test structures. This paper will describe how the methodology defined above has been applied to develop contacts and vias for multilevel metallization
  • Keywords
    ULSI; integrated circuit metallisation; semiconductor process modelling; ULSI technology; calibration; contacts; multilevel metallization; predictive model; process control; test structures; vias; Calibration; Costs; Etching; Government; Integrated circuit technology; Metallization; Physics; Predictive models; Process control; Ultra large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    University/Government/Industry Microelectronics Symposium, 1995., Proceedings of the Eleventh Biennial
  • Conference_Location
    Austin, TX
  • ISSN
    0749-6877
  • Print_ISBN
    0-7803-2596-6
  • Type

    conf

  • DOI
    10.1109/UGIM.1995.514127
  • Filename
    514127