DocumentCode
2349688
Title
A new methodology for fast development of multilevel metallization for ULSI technology
Author
Islam Raja, M. ; El-Ghor, Mohamed ; Yin, David ; Pollack, Gordon
Author_Institution
Semicond. Process & Design Center, Texas Instrum. Inc., Dallas, TX, USA
fYear
1995
fDate
16-17 May 1995
Firstpage
113
Lastpage
117
Abstract
A methodology has been developed for fast process development and integration of multilevel metallization systems for ultra large scale integration technology. This methodology defines a set of primitive processes, which are then arranged in the required configuration to build or develop multilevel metallization systems. Each primitive process will have a predictive model and process control and calibration strategy including a set of test structures. This paper will describe how the methodology defined above has been applied to develop contacts and vias for multilevel metallization
Keywords
ULSI; integrated circuit metallisation; semiconductor process modelling; ULSI technology; calibration; contacts; multilevel metallization; predictive model; process control; test structures; vias; Calibration; Costs; Etching; Government; Integrated circuit technology; Metallization; Physics; Predictive models; Process control; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
University/Government/Industry Microelectronics Symposium, 1995., Proceedings of the Eleventh Biennial
Conference_Location
Austin, TX
ISSN
0749-6877
Print_ISBN
0-7803-2596-6
Type
conf
DOI
10.1109/UGIM.1995.514127
Filename
514127
Link To Document