Mobility profiles and thermal characterization of SOI and Si-on-SiC hybrid substrates

Author

Lotfi, S. ; Li, L. -G ; Vallin, Ö ; Norström, H. ; Olsson, J.

Author_Institution

Angstrom Lab., Uppsala Univ., Uppsala, Sweden

fYear

2011

fDate

3-6 Oct. 2011

Firstpage

1

Lastpage

2

Abstract

This paper presents new results revealing the electrical properties of the silicon-on-polycrystalline silicon carbide hybrid substrate. The thermal resistance in the substrate was measured and compared to simulations and is linked to the measured reduced self-heating in LDMOS transistors. The mobility in the device layer was extracted and shows slightly lower values in the hybrid compared to the SOI. Furthermore, the gate oxide integrity was evaluated suggesting that the poly-Si layer in the Si/SiC hybrid may act as a gettering layer for impurities due to the lower QBD spread.

Keywords

MOSFET; elemental semiconductors; silicon; silicon-on-insulator; LDMOS transistor; SOI; Si; Si-SiC; Si-on-SiC hybrid substrate; device layer mobility; gate oxide integrity; lower QBD spread; reduced self-heating measurement; silicon-on-polycrystalline silicon carbide hybrid substrate; thermal characterization; thermal resistance; Hybrid power systems; Logic gates; Silicon; Silicon carbide; Substrates; Temperature measurement; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference (SOI), 2011 IEEE International

Conference_Location

Tempe, AZ

ISSN

1078-621X

Print_ISBN

978-1-61284-761-0

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2011.6081708

Filename

6081708