DocumentCode
2349706
Title
A Novel SRAM-Cell Based Input Vector Monitoring Concurrent BIST Architecture
Author
Voyiatzis, I. ; Efstathiou, C. ; Antonopoulou, H.
Author_Institution
Dept. of Inf., Technol. Educ. Inst. of Athens, Athens, Greece
fYear
2011
fDate
23-27 May 2011
Firstpage
206
Lastpage
206
Abstract
Input vector monitoring concurrent Built-In Self-Test (BIST) schemes can circumvent problems appearing separately in on-line and off-line BIST techniques. The concurrent test latency of an input vector monitoring concurrent BIST scheme is the time required in order to complete the concurrent test. In this paper a novel input vector monitoring concurrent BIST scheme is presented. The proposed BIST scheme is shown to have lower hardware overhead for the same values of the concurrent test latency compared to previously proposed schemes.
Keywords
SRAM chips; built-in self test; circuit testing; CUT; SRAM-cell; circuit under test; input vector monitoring concurrent BIST architecture; input vector monitoring concurrent built-in self test technique; Built-in self-test; Computer architecture; Decoding; Flip-flops; Logic gates; Monitoring; Radiation detectors;
fLanguage
English
Publisher
ieee
Conference_Titel
Test Symposium (ETS), 2011 16th IEEE European
Conference_Location
Trondheim
ISSN
1530-1877
Print_ISBN
978-1-4577-0483-3
Electronic_ISBN
1530-1877
Type
conf
DOI
10.1109/ETS.2011.60
Filename
5957952
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