Characterization of a PVD-TiN as the diffusion barrier/adhesion promoter for use in a multilevel copper interconnection technology

Author

Berti, Antonio ; Murarka, Shyam P.

Author_Institution

Digital Equipment Corp., Hudson, MA, USA

fYear

1995

fDate

16-17 May 1995

Firstpage

118

Lastpage

119

Abstract

The use of copper, as the interconnection metal in a multilevel scheme, will require a diffusion barrier/adhesion promoter (DB/AP) layer between the metal and the dielectric. The use of TiN as a DB/AP layer in a first generation copper metallization scheme has thus been investigated. It is projected that this 0.25 μm technology will utilize 0.5 μm wide metal interconnections with aspect ratio of 1.0. Because using a 40 nm TiN cladding will only marginally increase the overall interconnection resistance, this barrier thickness was chosen as the default thickness for this study

Keywords

adhesion; copper; diffusion barriers; integrated circuit interconnections; sputtered coatings; titanium compounds; 0.25 micron; Cu; PVD-TiN; TiN; adhesion promoter; diffusion barrier; metallization; multilevel copper interconnection technology; Adhesives; Annealing; Copper; Grain boundaries; Temperature; Testing; Thermal expansion; Thermal stresses; Tin; Titanium;

fLanguage

English

Publisher

ieee

Conference_Titel

University/Government/Industry Microelectronics Symposium, 1995., Proceedings of the Eleventh Biennial

Conference_Location

Austin, TX

ISSN

0749-6877

Print_ISBN

0-7803-2596-6

Type

conf

DOI

10.1109/UGIM.1995.514128

Filename

514128