DocumentCode :
2349729
Title :
Benefits and challenges of FDSOI technology for 14nm node
Author :
Faynot, Olivier
Author_Institution :
LETI, CEA, Grenoble, France
fYear :
2011
fDate :
3-6 Oct. 2011
Firstpage :
1
Lastpage :
21
Abstract :
Electrostatic, strain and power consumption will drive the scaling UTBOX helps the FDSOI scaling FDSOI scalability ensured down to LG~14nm Strain compatibility will be mandatory Both FinFET and FDSOI will merge towards nanowire type of devices.
Keywords :
MOSFET; SPICE; silicon-on-insulator; FDSOI scalability; FDSOI scaling; FDSOI technology; FinFET; electrostatic; nanowire; power consumption; scaling UTBOX; strain compatibility; Circuit synthesis; Conferences; Epitaxial growth; Integrated circuit modeling; Logic gates; Random access memory; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference (SOI), 2011 IEEE International
Conference_Location :
Tempe, AZ
ISSN :
1078-621X
Print_ISBN :
978-1-61284-761-0
Electronic_ISBN :
1078-621X
Type :
conf
DOI :
10.1109/SOI.2011.6081710
Filename :
6081710
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2349729
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