Title :
The future of SOI transistor technology
Author :
Doris, Bruce ; Khakifirooz, Ali ; Cheng, Kangguo
Author_Institution :
IBM Res. at Albany, Albany, NY, USA
Abstract :
A collection of slides from the author´s conference presentation is given. The following topics are discussed: performance enhancement substrates; conventional devices; fully depleted devices; SOI substrates; planar FD options and non-planar FD options.
Keywords :
performance evaluation; silicon-on-insulator; substrates; transistors; SOI substrates; SOI transistor technology; conventional devices; fully depleted devices; nonplanar FD options; performance enhancement substrates; Doping; FinFETs; Gate leakage; Logic gates; Performance evaluation; Subthreshold current;
Conference_Titel :
SOI Conference (SOI), 2011 IEEE International
Conference_Location :
Tempe, AZ
Print_ISBN :
978-1-61284-761-0
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2011.6081711
