Title :
Variability origins of FinFETs and perspective beyond 20nm node
Author :
Matsukawa, Takashi ; Liu, Yongxun ; Endo, Kazuhiko ; O´Uchi, Shin-Ichi ; Masahara, Meishoku
Author_Institution :
Nanoelectron. Res. Inst., AIST, Tsukuba, Japan
Abstract :
A collection of slides from the author´s conference covering the following topics: merit of FinFETs in variability issues; origins of Vt variability; parasitic resistance variation; and perspective beyond 20nm-node.
Keywords :
MOSFET; FinFET variability origins; parasitic resistance variation; perspective beyond 20nm node; Conferences; FinFETs; Fluctuations; Logic gates; MOSFET circuits; Resource description framework; Tin;
Conference_Titel :
SOI Conference (SOI), 2011 IEEE International
Conference_Location :
Tempe, AZ
Print_ISBN :
978-1-61284-761-0
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2011.6081713
