• DocumentCode
    2349778
  • Title

    Variability origins of FinFETs and perspective beyond 20nm node

  • Author

    Matsukawa, Takashi ; Liu, Yongxun ; Endo, Kazuhiko ; O´Uchi, Shin-Ichi ; Masahara, Meishoku

  • Author_Institution
    Nanoelectron. Res. Inst., AIST, Tsukuba, Japan
  • fYear
    2011
  • fDate
    3-6 Oct. 2011
  • Firstpage
    1
  • Lastpage
    28
  • Abstract
    A collection of slides from the author´s conference covering the following topics: merit of FinFETs in variability issues; origins of Vt variability; parasitic resistance variation; and perspective beyond 20nm-node.
  • Keywords
    MOSFET; FinFET variability origins; parasitic resistance variation; perspective beyond 20nm node; Conferences; FinFETs; Fluctuations; Logic gates; MOSFET circuits; Resource description framework; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference (SOI), 2011 IEEE International
  • Conference_Location
    Tempe, AZ
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-61284-761-0
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2011.6081713
  • Filename
    6081713
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2349778