4F-2 AlN Tuning Fork Type Resonators used with MEMS Technologies

Author

Isobe, A. ; Asai, K. ; Matsumoto, H. ; Shibagaki, N.

Author_Institution

Central Res. Lab., Hitachi Ltd., Kokubunji-shi

fYear

2006

fDate

2-6 Oct. 2006

Firstpage

560

Lastpage

563

Abstract

In this paper, we discuss miniature low-frequency resonators fabricated on Si chips using the technologies of tuning-fork-type and MEMS resonators. First, we theoretically analyzed the electrical responses and optimized the resonators´ structures by using a finite element method. We found that a tuning-fork-type resonator using an aluminum nitride piezoelectric film showed strong resonance and miniaturized features because of the strong piezoelectric properties. Finally, we fabricated a small tuning-fork-type resonator on a Si wafer with MEMS technology. The fork length was 200 mum, and the aluminum nitride thickness was 2 mum. The resonator showed low-frequency resonance at 1.8 MHz with a high Q value of 1074 and an excellent capacitance ratio of 229 in air, which is suitable for timers of microprocessor ICs

Keywords

acoustic resonators; aluminium compounds; crystal resonators; finite element analysis; micromechanical resonators; 1.8 MHz; 2 micron; 200 micron; AlN; MEMS resonators; MEMS technology; aluminum nitride piezoelectric film; finite element method; microelectromechanical systems; piezoelectricity; tuning fork type resonators; Electrodes; Micromechanical devices; Microprocessors; Piezoelectric films; Resonance; Resonant frequency; Semiconductor films; Shape; Substrates; Vibrations;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 2006. IEEE

Conference_Location

Vancouver, BC

ISSN

1051-0117

Print_ISBN

1-4244-0201-8

Electronic_ISBN

1051-0117

Type

conf

DOI

10.1109/ULTSYM.2006.148

Filename

4152004