Title :
Modelling of selective epitaxial growth (SEG) and epitaxial lateral overgrowth (ELO) of silicon in SiH2Cl2-HCl-H2 system
Author :
Kongetira, Poonacha ; Neudeck, Gerold W. ; Takoudis, Christos G.
Author_Institution :
Purdue Univ., West Lafayette, IN, USA
Abstract :
A semi-empirical model for the growth rate of selective epitaxial silicon (SEG) in the dichlorosilane HCl-H2 system was obtained from 820-1020°C and 40-150 Torr and over a range of gas flows and pressures. The growth rate expression was considered to be the sum of a growth term, dependent on the partial pressures of dichlorosilane and hydrogen, and an etch term that varies as the partial pressure of HCl. The growth and etch terms were found to have an Arrhenius relation with temperature, with activation energies of 52 kcal/mol and 36 kcal/mol respectively
Keywords :
elemental semiconductors; semiconductor growth; semiconductor process modelling; silicon; vapour phase epitaxial growth; 40 to 150 torr; 820 to 1020 C; Arrhenius relation; ELO; H2; HCl; SEG; SOI device fabrication; Si; SiH2Cl2; SiH2Cl2-HCl-H2; SiH2Cl2-HCl-H2 system; activation energies; dichlorosilane; epitaxial lateral overgrowth; etch term; growth rate; partial pressures; selective epitaxial growth; semi-empirical model; Chemical engineering; Epitaxial growth; Etching; Fluid flow; MOSFETs; Semiconductor device modeling; Semiconductor process modeling; Silicon on insulator technology; Substrates; Temperature;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1995., Proceedings of the Eleventh Biennial
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-2596-6
DOI :
10.1109/UGIM.1995.514138
