Title :
BJT effect analysis in p- and n-SOI MuGFETs with high-k gate dielectrics and TiN metal gate electrode for a 1T-DRAM application
Author :
Galeti, M. ; Rodrigues, M. ; Martino, J.A. ; Collaert, N. ; Simoen, E. ; Aoulaiche, M. ; Jurczak, M. ; Claeys, C.
Author_Institution :
LSI/PSI, Univ. of Sao Paulo, Sao Paulo, Brazil
Abstract :
This paper presents an analysis of the bipolar effect in triple gate n-and p-SOI devices with high-k/TiN metal gate. High-k dielectrics and thicker TiN achieve a larger trigger voltage. However, a reduced program window is found for MuGFETs with high-k dielectrics. p-FET devices give rise to a smaller sense margin and program window due to the reduced hole mobility. Narrow fin devices exhibit a larger trigger voltage and reduced program window and sense margin for a given Vds.
Keywords :
DRAM chips; bipolar transistors; electrodes; field effect transistors; silicon-on-insulator; titanium compounds; 1T-DRAM application; BJT effect analysis; TiN; high-k gate dielectrics; metal gate electrode; n-SOI MuGFET; narrow fin devices; p-FET devices; p-SOI MuGFET; reduced hole mobility; reduced program window; triple gate n-SOI devices; triple gate p-SOI devices; Capacitance; Dielectrics; High K dielectric materials; Logic gates; Tin; Voltage measurement;
Conference_Titel :
SOI Conference (SOI), 2011 IEEE International
Conference_Location :
Tempe, AZ
Print_ISBN :
978-1-61284-761-0
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2011.6081720
