Title :
Contributions from the DOE center for semiconductor modeling and simulation
Author :
Albers, R.C. ; Cartwright, D.C. ; George, D.C. ; Kress, J.D. ; Kwan, T.J. ; Nebel, R.A. ; Soran, P.D. ; Straub, G.K. ; Trease, H.E. ; Walker, R.B. ; Hays, G.N.
Author_Institution :
Los Alamos Nat. Lab., NM, USA
Abstract :
The US Department of Energy (DOE) and the Semiconductor Research Corporation (SRC) have recently initiated a five-year program, which combines the semiconductor expertise of the SRC with the DOE National Laboratory capabilities in high performance computing, to provide more predictive, advanced technology, modeling and simulation tools for the semiconductor industry. The need for these tools and five initial project thrust areas are described: topography, bulk processes, grids and computational science, interconnects, and devices
Keywords :
digital simulation; electronic engineering computing; etching; integrated circuit interconnections; integrated circuit manufacture; ion implantation; mesh generation; research initiatives; semiconductor doping; semiconductor process modelling; simulation; surface topography; vapour deposition; IC fabrication; IC technology; Semiconductor Research Corporation; US DOE center; US Department of Energy; bulk processes; high performance computing; interconnects; semiconductor modeling; simulation tools; topography; Application specific integrated circuits; Circuit simulation; Computational modeling; Costs; Electronics industry; Integrated circuit modeling; Integrated circuit technology; Laboratories; Predictive models; US Department of Energy;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1995., Proceedings of the Eleventh Biennial
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-2596-6
DOI :
10.1109/UGIM.1995.514140
