Contributions from the DOE center for semiconductor modeling and simulation

Author

Albers, R.C. ; Cartwright, D.C. ; George, D.C. ; Kress, J.D. ; Kwan, T.J. ; Nebel, R.A. ; Soran, P.D. ; Straub, G.K. ; Trease, H.E. ; Walker, R.B. ; Hays, G.N.

Author_Institution

Los Alamos Nat. Lab., NM, USA

fYear

1995

fDate

16-17 May 1995

Firstpage

172

Lastpage

181

Abstract

The US Department of Energy (DOE) and the Semiconductor Research Corporation (SRC) have recently initiated a five-year program, which combines the semiconductor expertise of the SRC with the DOE National Laboratory capabilities in high performance computing, to provide more predictive, advanced technology, modeling and simulation tools for the semiconductor industry. The need for these tools and five initial project thrust areas are described: topography, bulk processes, grids and computational science, interconnects, and devices

Keywords

digital simulation; electronic engineering computing; etching; integrated circuit interconnections; integrated circuit manufacture; ion implantation; mesh generation; research initiatives; semiconductor doping; semiconductor process modelling; simulation; surface topography; vapour deposition; IC fabrication; IC technology; Semiconductor Research Corporation; US DOE center; US Department of Energy; bulk processes; high performance computing; interconnects; semiconductor modeling; simulation tools; topography; Application specific integrated circuits; Circuit simulation; Computational modeling; Costs; Electronics industry; Integrated circuit modeling; Integrated circuit technology; Laboratories; Predictive models; US Department of Energy;

fLanguage

English

Publisher

ieee

Conference_Titel

University/Government/Industry Microelectronics Symposium, 1995., Proceedings of the Eleventh Biennial

Conference_Location

Austin, TX

ISSN

0749-6877

Print_ISBN

0-7803-2596-6

Type

conf

DOI

10.1109/UGIM.1995.514140

Filename

514140