DocumentCode
2349938
Title
A microwave model for high electron mobility transistors
Author
Ahn, Hyungkeun ; El Nokali, Mahmoud A.
Author_Institution
Dept. of Electr. Eng., Pittsburgh Univ., PA, USA
fYear
1995
fDate
16-17 May 1995
Firstpage
182
Lastpage
186
Abstract
A physically based model is used to predict the S and Y-parameters of the high electron mobility transistor as function of the applied gate bias and the operating frequency. The model is used to estimate the power gain and the maximum stable gain characteristics for HEMTs with different physical and structural parameters which helps in the optimization of the amplifier design
Keywords
S-parameters; equivalent circuits; high electron mobility transistors; microwave field effect transistors; semiconductor device models; HEMT; S-parameters; Y-parameters; applied gate bias; high electron mobility transistors; maximum stable gain characteristics; microwave model; operating frequency; physically based model; power gain; Capacitance; Electrons; Equivalent circuits; Frequency; HEMTs; MODFETs; Predictive models; Scattering parameters; Structural engineering; Transducers;
fLanguage
English
Publisher
ieee
Conference_Titel
University/Government/Industry Microelectronics Symposium, 1995., Proceedings of the Eleventh Biennial
Conference_Location
Austin, TX
ISSN
0749-6877
Print_ISBN
0-7803-2596-6
Type
conf
DOI
10.1109/UGIM.1995.514141
Filename
514141
Link To Document