Title :
High density DRAM for space utilizing embedded DRAMs macros in 32nm SOI CMOS
Author :
Popp, Jeremy ; Ballast, John ; Rabaa, Salim ; McKay, Tony ; Braatz, Jim
Author_Institution :
Boeing Res. & Technol., Seattle, WA, USA
Abstract :
Ultradeep submicron SOI CMOS with eDRAM enables space hardened high density memories. Significant benefit for high performance data processors. Techniques exist to mitigate SEE challenges in 32nm SOI CMOS. Reliant on intrinsic TID hardness for high density memory array. Representative data in 45nm SOI suggests should meet required leakage.
Keywords :
CMOS memory circuits; DRAM chips; silicon-on-insulator; SEE challenge; SOI CMOS technology; density memory; eDRAM macro; embedded DRAM macro; high density DRAM; high density memory array; intrinsic TID hardness; performance data processor; size 32 nm; size 45 nm; space utilization; ultradeep submicron SOI CMOS technology; Aerospace electronics; CMOS technology; Ions; Logic gates; Protons; Silicon; Space vehicles;
Conference_Titel :
SOI Conference (SOI), 2011 IEEE International
Conference_Location :
Tempe, AZ
Print_ISBN :
978-1-61284-761-0
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2011.6081722
