• DocumentCode
    2349948
  • Title

    High density DRAM for space utilizing embedded DRAMs macros in 32nm SOI CMOS

  • Author

    Popp, Jeremy ; Ballast, John ; Rabaa, Salim ; McKay, Tony ; Braatz, Jim

  • Author_Institution
    Boeing Res. & Technol., Seattle, WA, USA
  • fYear
    2011
  • fDate
    3-6 Oct. 2011
  • Firstpage
    1
  • Lastpage
    22
  • Abstract
    Ultradeep submicron SOI CMOS with eDRAM enables space hardened high density memories. Significant benefit for high performance data processors. Techniques exist to mitigate SEE challenges in 32nm SOI CMOS. Reliant on intrinsic TID hardness for high density memory array. Representative data in 45nm SOI suggests should meet required leakage.
  • Keywords
    CMOS memory circuits; DRAM chips; silicon-on-insulator; SEE challenge; SOI CMOS technology; density memory; eDRAM macro; embedded DRAM macro; high density DRAM; high density memory array; intrinsic TID hardness; performance data processor; size 32 nm; size 45 nm; space utilization; ultradeep submicron SOI CMOS technology; Aerospace electronics; CMOS technology; Ions; Logic gates; Protons; Silicon; Space vehicles;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference (SOI), 2011 IEEE International
  • Conference_Location
    Tempe, AZ
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-61284-761-0
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2011.6081722
  • Filename
    6081722
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2349948