Analysis of quantization effects in silicon (100) inversion layers using a Monte Carlo tool

Author

Shih, W.K. ; Jallepalli, S. ; Yeap, C.F. ; Rashed, M. ; Maziar, C.M. ; Tasch, A.F., Jr.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

fYear

1995

fDate

16-17 May 1995

Firstpage

201

Lastpage

204

Abstract

The continued reduction of gate oxide thicknesses and increase of channel doping has created an important need for careful treatment of inversion layer quantization in device models. In this work, the electron transport in a uniform silicon (100) inversion layer has been studied with single-particle Monte Carlo (MC) simulation. With channel quantization effects included, the universal mobility curve in the ohmic region, good agreement with the velocity-field characteristics produced by the UT-mobility model has also been obtained

Keywords

MOSFET; Monte Carlo methods; carrier mobility; characteristics measurement; elemental semiconductors; inversion layers; semiconductor device models; silicon; MOSFETs; Monte Carlo tool; Si; device models; inversion layers; ohmic region; quantization effects; single-particle simulation; universal mobility curve; velocity-field characteristics; Brillouin scattering; Doping; Effective mass; Electrons; Equations; Microelectronics; Monte Carlo methods; Quantization; Semiconductor process modeling; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

University/Government/Industry Microelectronics Symposium, 1995., Proceedings of the Eleventh Biennial

Conference_Location

Austin, TX

ISSN

0749-6877

Print_ISBN

0-7803-2596-6

Type

conf

DOI

10.1109/UGIM.1995.514145

Filename

514145