DocumentCode
235028
Title
Lithography challenges for 2.5D interposer manufacturing
Author
Cochet, Klaus Ruhmer Philippe ; McCleary, Roger ; Rogoff, Rich ; Roy, Ranjit
Author_Institution
Rudolph Technol. Inc., Wilmington, MA, USA
fYear
2014
fDate
27-30 May 2014
Firstpage
523
Lastpage
527
Abstract
In recent years, 2.5D packaging has quickly turned from a buzzword into an Advanced Packaging reality. Not dissimilar to the Multi-Chip-Modules (MCMs) of the past, 2.5D packages utilizing high density interposers with favorable electrical characteristics can be a cost efficient and high performance alternative to significantly more complex 3D or SOC integration schemes. Dictated by the trend towards ever thinner, smaller and higher integrated and more capable devices, high density interposer technology is required to enable 2.5D packages. Patterning of these kinds of substrates, regardless if manufactured on silicon, glass or other suitable materials requires relatively advanced lithography systems. Simple contact or proximity exposure is no longer up to the task. This paper specifically lists the various patterning / lithography challenges which are being encountered when manufacturing high density 2.5D interposers. Typical backend lithography requirements regarding minimum resolution, overlay, maximum sidewall angle capability in relatively thick resist and depth of focus are established and discussed. In addition, the application-specific lithography challenges such as a large exposure field size, IR backside alignment capability for TSV (Through-Silicon-Via) or TSG (Through-Glass-Via) definitions and warped wafer or substrate handling are being reviewed and characterized. As with all back-end processes, interposer manufacturing must be extremely cost efficient and high yielding. A middle ground between costly front-end processes and more robust, faster and lower cost back-end processes has to be found. This paper also discusses potential cost reduction via economy of scale. A lithography cost analysis for glass interposer manufacturing on large panels is being offered.
Keywords
multichip modules; proximity effect (lithography); three-dimensional integrated circuits; 2.5D interposer manufacturing; 2.5D packages; 2.5D packaging; IR backside alignment capability; MCM; TSG; TSV; application-specific lithography challenges; cost reduction; large exposure field size; multichip-modules; patterning-lithography challenges; proximity exposure; simple contact; substrate handling; through-glass-via; through-silicon-via; warped wafer; Lithography; Packaging; Silicon; Substrates; Three-dimensional displays; Throughput; 2.5D; 3D; Advanced Packaging; Glass Interposer; IR alignment; MCM; Multichip Module; Panel; RDL; Redistribution Layer; Si Interposer; Stepper; TSG; TSV; Through Glass Via; Through Silicon Via; backside alignment; overlay; sidewall angle; thick resist;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2014 IEEE 64th
Conference_Location
Orlando, FL
Type
conf
DOI
10.1109/ECTC.2014.6897334
Filename
6897334
Link To Document