A circuit model for carbon nanotube interconnects: comparative study with Cu interconnects for scaled technologies

Author

Raychowdhury, Arijit ; Roy, Kaushik

Author_Institution

Dept. of ECE, Purdue Univ., USA

fYear

2004

fDate

7-11 Nov. 2004

Firstpage

237

Lastpage

240

Abstract

Semiconducting carbon nanotubes (CNT) have gained immense popularity as possible successors to silicon as the channel material for ultra high performance field effect transistors. On the other hand, their metallic counterparts have often been regarded as ideal interconnects for the future technology generations. Owing to their high current densities and increased reliability, metallic-single walled CNTs (SWCNTs) have been subjects of fundamental research both in theory as well as experiments. Metallic CNTs have been modeled for RF applications in (Burke, 2003) using an LC model. We present an efficient circuit compatible RLC model for metallic SW CNTs, and analyze the impact of SW CNTs on the performance of ultra scaled digital VLSI design.

Keywords

RLC circuits; VLSI; carbon nanotubes; copper; integrated circuit interconnections; integrated circuit modelling; Cu interconnects; RF applications; RLC model; carbon nanotube interconnects; circuit modeling; digital VLSI design; high current density; metallic CNT modeling; metallic-single walled CNT; ultra scaled VLSI design; Carbon nanotubes; Current density; FETs; Integrated circuit interconnections; Organic materials; RLC circuits; Reliability theory; Semiconductivity; Semiconductor materials; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Computer Aided Design, 2004. ICCAD-2004. IEEE/ACM International Conference on

ISSN

1092-3152

Print_ISBN

0-7803-8702-3

Type

conf

DOI

10.1109/ICCAD.2004.1382578

Filename

1382578