DocumentCode :
2350984
Title :
Fully depleted 0.25 μm MOSFETs on SOS, SIMOX and BSOI substrates
Author :
Sadana, D.K. ; Mii, Y.J. ; Hovel, H.J. ; Sun, J.Y.-C. ; Taur, Y. ; Demic, C. ; Chan, K. ; Cohen, S.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fYear :
1994
fDate :
3-6 Oct 1994
Firstpage :
6
Lastpage :
8
Abstract :
We present the first comparison of 0.25 μm nMOSFET devices fabricated on SOS, SIMOX and BSOI substrates with a fully depleted (FD) device design for low power analog and digital applications. All the substrates were processed nearly identically during device fabrication. SOI and SOS materials issues. Si thickness uniformity, device results, back-channel leakage and self heating are discussed
Keywords :
MOSFET; SIMOX; elemental semiconductors; leakage currents; semiconductor technology; silicon; silicon-on-insulator; 0.25 micron; BSOI substrates; SIMOX substrates; SOS substrates; Si; back-channel leakage; device fabrication; fully depleted MOSFETs; low power applications; self heating; thickness uniformity; Design optimization; Doping; Fabrication; Heating; Inductors; MOSFETs; Manufacturing; Oxidation; Thickness control; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 1994 Proceedings., 1994 IEEE International
Conference_Location :
Nantucket, MA
Print_ISBN :
0-7803-2406-4
Type :
conf
DOI :
10.1109/SOI.1994.514202
Filename :
514202
Link To Document :
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