Title :
Fully depleted 0.25 μm MOSFETs on SOS, SIMOX and BSOI substrates
Author :
Sadana, D.K. ; Mii, Y.J. ; Hovel, H.J. ; Sun, J.Y.-C. ; Taur, Y. ; Demic, C. ; Chan, K. ; Cohen, S.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
We present the first comparison of 0.25 μm nMOSFET devices fabricated on SOS, SIMOX and BSOI substrates with a fully depleted (FD) device design for low power analog and digital applications. All the substrates were processed nearly identically during device fabrication. SOI and SOS materials issues. Si thickness uniformity, device results, back-channel leakage and self heating are discussed
Keywords :
MOSFET; SIMOX; elemental semiconductors; leakage currents; semiconductor technology; silicon; silicon-on-insulator; 0.25 micron; BSOI substrates; SIMOX substrates; SOS substrates; Si; back-channel leakage; device fabrication; fully depleted MOSFETs; low power applications; self heating; thickness uniformity; Design optimization; Doping; Fabrication; Heating; Inductors; MOSFETs; Manufacturing; Oxidation; Thickness control; Threshold voltage;
Conference_Titel :
SOI Conference, 1994 Proceedings., 1994 IEEE International
Conference_Location :
Nantucket, MA
Print_ISBN :
0-7803-2406-4
DOI :
10.1109/SOI.1994.514202
