Title :
A SOI CMOS smart strain sensor
Author :
Rue, B. ; Olbrechts, B. ; Raskin, J. -P ; Flandre, D.
Author_Institution :
Inst. of Inf. & Commun. Technol., Electron. & Appl. Math. (ICTEAM), Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium
Abstract :
A CMOS strain sensor has been fabricated in a 1μm FD SOI CMOS process. It is based on the piezoresistive effects of PMOS transistors and integrates a frequency conversion circuit. Testing of the chip mounted on a bent hard steel blade shows fair sensitivity for 10 μW power consumption.
Keywords :
CMOS integrated circuits; MOSFET; piezoresistive devices; silicon-on-insulator; strain sensors; FD SOI CMOS process; PMOS transistors; SOI CMOS smart strain sensor; chip mounted; frequency conversion circuit; piezoresistive effects; power consumption; steel blade; Blades; CMOS integrated circuits; Mirrors; Silicon; Steel; Strain; Stress; CMOS; Low-Power Consumption; Piezoresistivity; Strain sensor; Stress; fully-depleted SOI;
Conference_Titel :
SOI Conference (SOI), 2011 IEEE International
Conference_Location :
Tempe, AZ
Print_ISBN :
978-1-61284-761-0
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2011.6081791
