Title :
Competitive SOC with UTBB SOI
Author :
Skotnicki, Thomas
Author_Institution :
STMicroelectron., Albany, NY, USA
Abstract :
(1) ST has 10 years experience with FDSOI (a) Research program on 3 sites: Crolles, LETI & ANT (b) Collaboration with SOITEC for wafer supply (2) Several technology elements have already been demonstrated (a) Process modules (STI, Gate materials, USJ, Ground plane, Hybrid) (b) Vth adjustment strategy (c) Body bias capability (d) On-Silicon Performance capability over 28LP (3) Move from R&D to Industrial Process of 28FD technology is for us (and our Partners) an efficient and straightforward response to the world-wide competition (4) Extension of FDSOI towards 20nm and 14nm nodes is also in preparation (a) with new bossters to further increase of the performance growth rate.
Keywords :
silicon-on-insulator; system-on-chip; 28FD technology; FDSOI; R&D; SOC; SOITEC; STI; USJ; UTBB SOI; body bias capability; gate materials; ground plane; industrial process; on-silicon performance capability; process modules; threshold voltage adjustment strategy; wafer supply; CMOS integrated circuits; CMOS technology; Computers; FinFETs; Internet; Servers; System-on-a-chip;
Conference_Titel :
SOI Conference (SOI), 2011 IEEE International
Conference_Location :
Tempe, AZ
Print_ISBN :
978-1-61284-761-0
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2011.6081792
