Title :
Experimental study of carrier transport in ultra-thin body GeOI MOSFETs
Author :
Lee, C.H. ; Nishimura, T. ; Tabata, T. ; Zhao, D. ; Ifuku, R. ; Nagashio, K. ; Kita, K. ; Toriumi, A.
Author_Institution :
Dept. of Mater. Eng., Univ. of Tokyo, Tokyo, Japan
Abstract :
We have investigated carrier transport properties in ultra-thin body (UTB) Ge-on-Insulator (GeOI) MOSFETs for the first time. Both n- and p-channel MOSFET operation fabricated on 9 nm GeOI has been demonstrated. In addition, a significant difference of Ge crystallinity in the front-channel from that in back-one is reported to explain the mobility degradation in UTB region.
Keywords :
MOSFET; semiconductor-insulator boundaries; Ge crystallinity; UTB region; carrier transport properties; mobility degradation; size 9 nm; ultra-thin body Ge-on-insulator MOSFET; ultra-thin body GeOI MOSFET; CMOS integrated circuits; Charge carrier processes; Logic gates; MOSFET circuits; MOSFETs; Silicon;
Conference_Titel :
SOI Conference (SOI), 2011 IEEE International
Conference_Location :
Tempe, AZ
Print_ISBN :
978-1-61284-761-0
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2011.6081794
