Title :
Novel analysis of impact of single dopants on sub-15nm channel length FDSOI NMOSFETs utilizing cryogenic measurements
Author :
Deshpande, V. ; Wacquez, R. ; Vinet, M. ; Jehl, X. ; Roche, B. ; Voisin, B. ; Sanquer, M. ; Mazurier, J. ; Weber, O. ; Tosti, L. ; Brévard, L. ; Perreau, P. ; Andrieu, F. ; Poiroux, T. ; Faynot, O.
Author_Institution :
LETI, CEA, Grenoble, France
Abstract :
In FDSOI NMOSFETs with sub-15 nm channel lengths, the presence of single diffused dopants is evidenced by cryogenic conductance measurements (down to 4 K). Based on the magnitude of conductance through these single dopants at 4 K, their lateral position in the channel is estimated. This cryogenic spatial analysis relates to room temperature characteristics and allows explaining the dispersion observed in the device characteristics.
Keywords :
MOSFET; silicon-on-insulator; FDSOI NMOSFET; cryogenic conductance measurements; cryogenic spatial analysis; device characteristics; single diffused dopants; size 15 nm; temperature 293 K to 298 K; Cryogenics; Logic gates; MOSFETs; Resonant tunneling devices; Temperature;
Conference_Titel :
SOI Conference (SOI), 2011 IEEE International
Conference_Location :
Tempe, AZ
Print_ISBN :
978-1-61284-761-0
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2011.6081795
