• DocumentCode
    2351192
  • Title

    Analysis of parasitic resistance in double gate FinFETs with different fin lengths

  • Author

    Yang, X. ; Maitra, K. ; Yeh, C. ; Zeitzoff, P. ; Raymond, M. ; Kulkarni, P. ; Wang, M. ; Yamashita, T. ; Basker, V.S. ; Standaert, T.E. ; Samavedam, S. ; Bu, H. ; Miller, R.J.

  • Author_Institution
    GLOBALFOUNDRIES Inc., Albany, NY, USA
  • fYear
    2011
  • fDate
    3-6 Oct. 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A significant increase in parasitic resistance (RPARA) fluctuation is observed when S/D length is getting smaller than the characteristic length (LTRANS). Resistance change evaluated on double gate finFETs with various fin lengths shows an excellent agreement between the experimental data and the analytical model. Further RPARA fluctuation improvement can be realized by optimizing the LTRANS.
  • Keywords
    MOSFET; S-D length; double gate FinFET; fin length; parasitic resistance fluctuation analysis; Analytical models; Electrical resistance measurement; FinFETs; Fluctuations; Logic gates; Resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference (SOI), 2011 IEEE International
  • Conference_Location
    Tempe, AZ
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-61284-761-0
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2011.6081799
  • Filename
    6081799
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2351192