Title :
Doped-channel heterojunction structures for millimeter-wave discrete devices and MMICs
Author :
Saunier, P. ; Kao, Y.C. ; Khatibzadeh, A.M. ; Tserng, H.Q. ; Bradshaw, K.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
AlGaAs/InGaAs/GaAs-type heterostructures with one or two channels have been used to fabricate both discrete devices and monolithic amplifiers for millimeter-wave operation. The authors report that 0.25-μm×50-μm discrete devices delivered a power density of 1 W/mm with 2.9-dB gain and 25% efficiency at 60 GHz. A 100-μm monolithic single-stage amplifier demonstrated a record 40% efficiency at 32 GHz, and a two-stage monolithic amplifier achieved a record 31.3% efficiency with 72-mW power and 13-dB gain at 32 GHz
Keywords :
III-V semiconductors; MMIC; aluminium compounds; gallium arsenide; indium compounds; microwave amplifiers; solid-state microwave devices; 100 micron; 13 dB; 2.9 dB; 25 percent; 31.3 percent; 32 GHz; 40 percent; 60 GHz; 72 mW; AlGaAs-InGaAs-GaAs; MM-wave; MMIC; doped channel heterojunction structures; millimeter-wave discrete devices; monolithic single-stage amplifier; two-stage monolithic amplifier; Epitaxial layers; Gain; Gallium arsenide; Heterojunctions; Indium gallium arsenide; MMICs; Photonic band gap; Power amplifiers; Substrates; Temperature;
Conference_Titel :
Military Communications Conference, 1989. MILCOM '89. Conference Record. Bridging the Gap. Interoperability, Survivability, Security., 1989 IEEE
Conference_Location :
Boston, MA
DOI :
10.1109/MILCOM.1989.104019
