Title :
Hole density modeling of SiGe channel fully depleted SOI P-MOSFET
Author :
Niu, G.F. ; Ruan, G. ; Huang, Y.P.
Author_Institution :
Dept. of Electr. Eng., Fudan Univ., Shanghai, China
Abstract :
The SiGe channel fully depleted SOI P-MOSFET has improved hole confinement compared to its bulk counterpart. We present here the modeling of the hole densities for this device to provide device design tools and explore the underlying physics
Keywords :
Ge-Si alloys; MOSFET; hole density; semiconductor device models; semiconductor materials; silicon-on-insulator; Si; SiGe; SiGe channel SOI P-MOSFET; fully depleted SOI PMOSFET; hole confinement; hole density modeling; p-channel device; Doping; Electron devices; Germanium silicon alloys; MOSFET circuits; Physics; Semiconductor process modeling; Silicon germanium; Substrates; Threshold voltage; Transconductance;
Conference_Titel :
SOI Conference, 1994 Proceedings., 1994 IEEE International
Conference_Location :
Nantucket, MA
Print_ISBN :
0-7803-2406-4
DOI :
10.1109/SOI.1994.514218
