• DocumentCode
    2351276
  • Title

    Parameter characterization of double gate ultra-thin SOI MOSFET

  • Author

    Lin, Jyi-Tsong

  • Author_Institution
    Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
  • fYear
    1994
  • fDate
    3-6 Oct 1994
  • Firstpage
    31
  • Lastpage
    32
  • Abstract
    One simple and important technique is presented to confirm that the back surface of the SOI/MOSFET is operating in the fully depleted mode, before starting the parameter extraction. This technique is necessary for the overall accuracy of the measurement. Additionally, the methods to extract all parameters of a small geometry SOI/MOSFET automatically are studied in this paper
  • Keywords
    MOSFET; semiconductor device models; silicon-on-insulator; back surface; device parameters; double gate ultra-thin SOI MOSFET; fully depleted mode; overall accuracy; parameter characterization; parameter extraction; small geometry SOI/MOSFET; Doping; Electrical resistance measurement; Equations; Fabrication; Geometry; MOSFET circuits; Optical films; Parameter extraction; Prototypes; Sun;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 1994 Proceedings., 1994 IEEE International
  • Conference_Location
    Nantucket, MA
  • Print_ISBN
    0-7803-2406-4
  • Type

    conf

  • DOI
    10.1109/SOI.1994.514220
  • Filename
    514220
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2351276