Title :
Parameter characterization of double gate ultra-thin SOI MOSFET
Author_Institution :
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
Abstract :
One simple and important technique is presented to confirm that the back surface of the SOI/MOSFET is operating in the fully depleted mode, before starting the parameter extraction. This technique is necessary for the overall accuracy of the measurement. Additionally, the methods to extract all parameters of a small geometry SOI/MOSFET automatically are studied in this paper
Keywords :
MOSFET; semiconductor device models; silicon-on-insulator; back surface; device parameters; double gate ultra-thin SOI MOSFET; fully depleted mode; overall accuracy; parameter characterization; parameter extraction; small geometry SOI/MOSFET; Doping; Electrical resistance measurement; Equations; Fabrication; Geometry; MOSFET circuits; Optical films; Parameter extraction; Prototypes; Sun;
Conference_Titel :
SOI Conference, 1994 Proceedings., 1994 IEEE International
Conference_Location :
Nantucket, MA
Print_ISBN :
0-7803-2406-4
DOI :
10.1109/SOI.1994.514220
