Silicon on aluminum nitride structures formed by wafer bonding

Author

Bengtsson, S. ; Choumas, M. ; Maszara, W.P. ; Bergh, M. ; Olesen, C. ; Södervall, U. ; Litwin, A.

Author_Institution

Dept. of Solid State Electron., Chalmers Univ. of Technol., Goteborg, Sweden

fYear

1994

fDate

3-6 Oct 1994

Firstpage

35

Lastpage

36

Abstract

This paper deals with the use of reactively sputtered aluminum nitride (AlN) films as insulators for Bond and Etch-back Silicon-On-Insulator (BESOI) materials. In SOI-applications where high power is dissipated in the silicon SOI-film the low thermal conductivity of the buried silicon dioxide layer may cause a temperature rise in the silicon film detrimentally affecting the device performance. An attractive alternative would be to replace the silicon dioxide of the SOI structure with another material, like diamond, silicon carbide or aluminum nitride. The thermal conductivity of AlN is considerably larger than that of Si0₂. This paper presents results on how sputter deposition of AlN may be combined with wafer bonding for the creation of highly thermally conductive SOI structures

Keywords

aluminium compounds; elemental semiconductors; silicon; silicon-on-insulator; sputter deposition; wafer bonding; BESOI; Si-AlN; bond and etch-back silicon-on-insulator; device performance; reactively sputtered films; sputter deposition; thermal conductivity; wafer bonding; Aluminum nitride; Conducting materials; Insulation; Semiconductor films; Silicon compounds; Silicon on insulator technology; Sputter etching; Temperature; Thermal conductivity; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1994 Proceedings., 1994 IEEE International

Conference_Location

Nantucket, MA

Print_ISBN

0-7803-2406-4

Type

conf

DOI

10.1109/SOI.1994.514222

Filename

514222