DocumentCode :
235133
Title :
Development of the technology to control the spatial distribution of plasma using double ICP coil
Author :
Sakuishi, Toshiyuki ; Murayama, Takahide ; Morikawa, Yasuhiro ; Suu, Koukou
Author_Institution :
ULVAC Inc., Susono, Japan
fYear :
2014
fDate :
27-30 May 2014
Firstpage :
846
Lastpage :
849
Abstract :
With the shrink of TSV diameter, smoothness of side wall and taper angle control become more and more important. We have developed scallop free etching by direct etching method. Direct etching method is continuous, not cyclical etching and deposition. Scallop does not occur in principle. Double ICP antenna newly developed has good controllability of side wall taper angle.
Keywords :
antennas in plasma; plasma deposition; plasma devices; sputter etching; ICP antenna; TSV diameter; cyclical etching; deposition; direct etching method; double ICP coil; scallop free etching; taper angle control; Antennas; Etching; Iterative closest point algorithm; Plasmas; Reliability; Silicon; Through-silicon vias;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2014 IEEE 64th
Conference_Location :
Orlando, FL
Type :
conf
DOI :
10.1109/ECTC.2014.6897384
Filename :
6897384
Link To Document :
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