Determination of key material parameters in SOI wafers by using a contactless optical technique

Author

Chang, Yun-Shan ; Li, Sheng S.

Author_Institution

Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA

fYear

1994

fDate

3-6 Oct 1994

Firstpage

39

Lastpage

40

Abstract

Presents a unique contactless dual-beam optical technique for determining several key material parameters such as excess carrier lifetimes in the top Si film and substrate, interface recombination velocities, and the thickness of top Si film and buried oxide in SIMOX wafers. An S-polarized reflectance technique is employed to determine the thickness of top Si film and buried oxide of SIMOX wafers using the blue and red laser beams (CdHe and HeNe lasers). In addition, a dual beam optical modulation (DBOM) technique is used to determine the excess carrier lifetimes and interface recombination velocities in the SOI wafers

Keywords

SIMOX; carrier lifetime; electron-hole recombination; optical modulation; reflectivity; silicon-on-insulator; thickness measurement; S-polarized reflectance technique; SIMOX wafers; Si; buried oxide; contactless dual-beam optical technique; dual beam optical modulation; excess carrier lifetimes; interface recombination velocities; material parameters; Charge carrier lifetime; Contacts; Laser beams; Laser excitation; Laser modes; Laser theory; Optical films; Optical materials; Semiconductor films; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1994 Proceedings., 1994 IEEE International

Conference_Location

Nantucket, MA

Print_ISBN

0-7803-2406-4

Type

conf

DOI

10.1109/SOI.1994.514224

Filename

514224