Speed, power, and yield comparison of thin bonded SOI versus bulk CMOS technologies

Author

Nowak, E.D. ; Ding, L. ; Loh, Y.T. ; Hu, C.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

1994

fDate

3-6 Oct 1994

Firstpage

41

Lastpage

42

Abstract

As it becomes more difficult to increase MOSFET current drive through standard scaling techniques, other methods to improve performance are being pursued. One such technique is to use silicon-on-insulator (SOI) starting wafers. Performance enhancements using SOI have been demonstrated by a number of authors. Most of the reported work has used SIMOX material. Bonded SOI material is an alternative to SIMOX, which potentially has lower material defect density. The purpose of this work was to compare bonded SOI performance and yield to that of bulk CMOS

Keywords

CMOS integrated circuits; MOSFET; integrated circuit technology; integrated circuit yield; silicon-on-insulator; IC yield; MOSFET current drive; material defect density; power performance; speed performance; thin bonded SOI; CMOS technology; Delay effects; MOSFET circuits; Power supplies; Semiconductor films; Silicon on insulator technology; Testing; Vehicles; Voltage; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1994 Proceedings., 1994 IEEE International

Conference_Location

Nantucket, MA

Print_ISBN

0-7803-2406-4

Type

conf

DOI

10.1109/SOI.1994.514225

Filename

514225