Series resistance at metal contact for thin film SOI MOSFET

Thin-film silicon-on-insulator (TFSOI) MOSFET has emerged as a strong candidate for high performance, high density and latch-up free CMOS devices with less fabrication steps. Thin silicon film should be used to achieve good behavior in SOI MOSFET. However, most of the papers on TFSOI have reported high parasitic source/drain series resistance and contact resistance, which tends to obscure the performance advantages of SOI. In this paper, we examined effects of top silicon film thickness (Tsi) on contact series resistance and contact hole etching method