Series resistance at metal contact for thin film SOI MOSFET

Author

Oh, Chann-Bonn ; Ahn, Jonghyon ; Lee, Sucheon ; Kim, Young-Wug ; Kim, Donghyun ; Kim, Bonggi

Author_Institution

Samsung Semicond., San Jose, CA, USA

fYear

1994

fDate

3-6 Oct 1994

Firstpage

43

Lastpage

44

Abstract

Thin-film silicon-on-insulator (TFSOI) MOSFET has emerged as a strong candidate for high performance, high density and latch-up free CMOS devices with less fabrication steps. Thin silicon film should be used to achieve good behavior in SOI MOSFET. However, most of the papers on TFSOI have reported high parasitic source/drain series resistance and contact resistance, which tends to obscure the performance advantages of SOI. In this paper, we examined effects of top silicon film thickness (Tsi) on contact series resistance and contact hole etching method

Keywords

MOSFET; contact resistance; etching; semiconductor device metallisation; silicon-on-insulator; contact hole etching method; contact resistance; latch-up free CMOS devices; metal contact; parasitic source/drain series resistance; performance advantages; series resistance; thin film SOI MOSFET; top film thickness; Contact resistance; Dry etching; Electrical resistance measurement; Implants; MOSFET circuits; Semiconductor films; Semiconductor thin films; Silicon; Transistors; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1994 Proceedings., 1994 IEEE International

Conference_Location

Nantucket, MA

Print_ISBN

0-7803-2406-4

Type

conf

DOI

10.1109/SOI.1994.514226

Filename

514226