Title :
Intracavity-contacted vertical-cavity lasers with submilliamp threshold currents over 77-300 K temperature range
Author :
Akulova, Y.A. ; Thibeault, B.J. ; Ko, J. ; Coldren, L.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
Dielectrically-apertured double-intracavity-contacted vertical-cavity InGaAs QW lasers with threshold currents of /spl sim/60 /spl mu/A at 77 K and 300 /spl mu/A at 300 K are reported. Single-mode output power up to 1.65 mW at 300 K is achieved due to the lasing from the second quantized subband of the quantum well.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser modes; quantum well lasers; 1.65 mW; 300 muA; 60 muA; 77 to 300 K; InGaAs; double-intracavity-contacted vertical-cavity InGaAs QW lasers; intracavity-contacted vertical-cavity lasers; second quantized subband; single-mode output power; submilliamp threshold currents; temperature range; threshold currents; Apertures; Cryogenics; Optical scattering; Optical sensors; Quantum well lasers; Temperature dependence; Temperature distribution; Temperature sensors; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location :
Haifa, Israel
Print_ISBN :
0-7803-3163-X
DOI :
10.1109/ISLC.1996.558803
