Ka/Q-band broadband, Ka and W-band low noise HEMT amplifiers

Author

Archer, Eric D. ; Ryu, Young II

Author_Institution

TRW Electron. Syst. Group, Redondo Beach, CA, USA

fYear

1989

fDate

15-18 Oct 1989

Firstpage

735

Abstract

The authors describe the design and fabrication of a Ka/ Q-band (27-46-GHz) balanced amplifier, a W-band (81-GHz) low-noise amplifier (LNA), and a Ka-band (28-40-GHz) LNA. These three amplifiers utilize three types of high-electron-mobility-transistor (HEMT) technology. The three technologies are planar-doped/nonplanar-doped AlGaAs and pseudomorphic InGaAs HEMT technologies. The Ka/Q-band balanced amplifier exhibited a 1-dB compression point between +10 and +14 dBm at 27 and 44 GHz utilizing the three HEMT technologies. The W-band LNA exhibited a 7.7-dB noise figure with a 7-dB gain at 80.5 GHz with the AlGaAs planar-doped HEMT and a 9.5-dB gain at 81.5 GHz with the pseudomorphic InGaAs HEMT. The Ka-band LNA exhibited a maximum noise figure of 3.9 dB with a minimum gain of 4.5 dB across the 28-40-GHz band

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; solid-state microwave circuits; 27 to 46 GHz; 28 to 40 GHz; 3.9 dB; 4.5 dB; 44 GHz; 7 dB; 7.7 dB; 80.5 GHz; 81 GHz; 81.5 GHz; 9.5 dB; AlGaAs; EHF; Ka-band LNA; Ka/Q-band balanced amplifier; SHF; W-band LNA; compression point; design; fabrication; high-electron-mobility-transistor; low-noise amplifier; nonplanar-doped; planar-doped HEMT; pseudomorphic InGaAs; Broadband amplifiers; Fabrication; Gain; Gallium arsenide; HEMTs; Indium gallium arsenide; Low-noise amplifiers; Noise figure; Radiofrequency amplifiers; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Military Communications Conference, 1989. MILCOM '89. Conference Record. Bridging the Gap. Interoperability, Survivability, Security., 1989 IEEE

Conference_Location

Boston, MA

Type

conf

DOI

10.1109/MILCOM.1989.104020

Filename

104020