• DocumentCode
    2351420
  • Title

    A novel bipolar/MOS device on SOI wafers for analog BiCMOS applications

  • Author

    Yallup, Kevin ; Edwards, Susan ; Creighton, Oliver

  • Author_Institution
    Analog Devices, Limerick, Ireland
  • fYear
    1994
  • fDate
    3-6 Oct 1994
  • Firstpage
    47
  • Lastpage
    48
  • Abstract
    Describes a novel bipolar transistor structure that can be fabricated on SOI wafers. The device combines a vertical base current flow path with a lateral collector flow path to form a BiMOS transistor
  • Keywords
    BiCMOS analogue integrated circuits; bipolar transistors; silicon-on-insulator; BiMOS transistor; SOI wafers; analog BiCMOS applications; bipolar transistor structure; bipolar/MOS device; lateral collector flow path; vertical base current flow path; BiCMOS integrated circuits; Bipolar transistors; CMOS process; MOS devices; Semiconductor films; Silicon; Springs; Textile industry; Voltage; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 1994 Proceedings., 1994 IEEE International
  • Conference_Location
    Nantucket, MA
  • Print_ISBN
    0-7803-2406-4
  • Type

    conf

  • DOI
    10.1109/SOI.1994.514228
  • Filename
    514228
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2351420