DocumentCode :
2351420
Title :
A novel bipolar/MOS device on SOI wafers for analog BiCMOS applications
Author :
Yallup, Kevin ; Edwards, Susan ; Creighton, Oliver
Author_Institution :
Analog Devices, Limerick, Ireland
fYear :
1994
fDate :
3-6 Oct 1994
Firstpage :
47
Lastpage :
48
Abstract :
Describes a novel bipolar transistor structure that can be fabricated on SOI wafers. The device combines a vertical base current flow path with a lateral collector flow path to form a BiMOS transistor
Keywords :
BiCMOS analogue integrated circuits; bipolar transistors; silicon-on-insulator; BiMOS transistor; SOI wafers; analog BiCMOS applications; bipolar transistor structure; bipolar/MOS device; lateral collector flow path; vertical base current flow path; BiCMOS integrated circuits; Bipolar transistors; CMOS process; MOS devices; Semiconductor films; Silicon; Springs; Textile industry; Voltage; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 1994 Proceedings., 1994 IEEE International
Conference_Location :
Nantucket, MA
Print_ISBN :
0-7803-2406-4
Type :
conf
DOI :
10.1109/SOI.1994.514228
Filename :
514228
Link To Document :
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