Influence of hydrodynamic models on the simulated characteristics of deep submicron SOI-MOSFETs

Although experimental results of deep submicron thin-film fully depleted SOI MOSFETs have been well documented, the macroscopic transport models used in the analysis of these devices are often limited to either drift-diffusion (DD) or simplified hydrodynamic (HD) models. Most of the assumptions used in these models are of limited validity especially in the deep submicron regime. There are a number of improved BD transport models developed over the past few years which extend the applicability of the models to the deep submicron regime. Industry has an immediate need to simulate deep submicron devices accurately with a reasonable computational latency, but the relative merit among differnt HD models is still unknown. The purpose of this paper is to study the influence of the HD transport models on the simulated device characteristics of deep submicron thin-film SOI MOSFETs