Title :
Formation of ultrathin single crystalline Si on glass by low temperature wafer direct bonding
Author :
Tong, Q.-Y. ; Gosele, U. ; Martini, T. ; Reiche, M.
Author_Institution :
Sch. of Eng., Duke Univ., Durham, NC, USA
Abstract :
Wafer bonding provides a high degree of flexibility in materials integration. Optimization of each of the two wafers for a specific application can be realized separately prior to the room temperature (RT) bonding process. In addition to applications in VLSI CMOS, SOG (bonded and thinned Si on glass), a new member of the SOI family, is very attractive for high resolution and high frequency displays, microwave devices, solar cells and optical waveguides. However, due to the large differences in thermal expansion coefficients between Si and glass, annealing to strengthen the bond must be performed at low temperatures to avoid excessive stress
Keywords :
CMOS integrated circuits; VLSI; annealing; silicon-on-insulator; thermal expansion; wafer bonding; CMOS; SOG; Si; VLSI; annealing; displays; low temperature wafer direct bonding; materials integration; microwave devices; optical waveguides; room temperature bonding process; silicon on glass; solar cells; thermal expansion coefficients; Bonding processes; Crystalline materials; Crystallization; Frequency; Glass; Optical waveguides; Temperature; Thermal stresses; Very large scale integration; Wafer bonding;
Conference_Titel :
SOI Conference, 1994 Proceedings., 1994 IEEE International
Conference_Location :
Nantucket, MA
Print_ISBN :
0-7803-2406-4
DOI :
10.1109/SOI.1994.514231
