DocumentCode :
2351481
Title :
5I-2 Thick PZT Sol-Gel Films for pMUT Transducers Performances Improvement
Author :
Belgacem, B. ; Calame, F. ; Muralt, P.
Author_Institution :
Ceramics Lab., Ecole Polytechnique Federale de Lausanne
fYear :
2006
fDate :
2-6 Oct. 2006
Firstpage :
926
Lastpage :
929
Abstract :
Piezoelectric micromachined ultrasonic transducers comprising a 10 mum thick Si device layer and a 1-4 mum thick piezoelectric PZT layer were investigated. The PZT films were deposited by a sol-gel technique. The transverse piezoelectric coefficient was measured as -14.9 C/m2. The electromechanical coupling increased stronger as expected with PZT thickness. The influence of both the shape and area of the top electrode on the device performance has been investigated. The electromechanical coupling coefficient (k) and quality factor (Q) have been measured in air and were fitted to an equivalent circuit model. The maximal k2 was obtained as 7.8%
Keywords :
piezoelectric transducers; sol-gel processing; thick films; ultrasonic transducers; Si device layer; electromechanical coupling coefficient; pMUT transducers performances improvement; piezoelectric PZT layer; piezoelectric micromachined ultrasonic transducers; quality factor; sol-gel technique; thick PZT sol-gel films; transverse piezoelectric coefficient; Coupling circuits; Electrodes; Equivalent circuits; Piezoelectric films; Piezoelectric transducers; Q factor; Q measurement; Shape; Ultrasonic transducers; Ultrasonic variables measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium, 2006. IEEE
Conference_Location :
Vancouver, BC
ISSN :
1051-0117
Print_ISBN :
1-4244-0201-8
Electronic_ISBN :
1051-0117
Type :
conf
DOI :
10.1109/ULTSYM.2006.247
Filename :
4152103
Link To Document :
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