DocumentCode :
2351564
Title :
Physical modeling of beneficial dynamic floating-body effects in non-fully depleted SOI CMOS circuits
Author :
Suh, Dongwook ; Fossum, Jerry G.
Author_Institution :
Florida Univ., Gainesville, FL, USA
fYear :
1994
fDate :
3-6 Oct 1994
Firstpage :
67
Lastpage :
68
Abstract :
The floating-body configuration is desirable in scaled SOI CMOS technology because of area efficacy. Unfortunately it portends various problems, one of which is the premature parasitic-BJT breakdown that occurs in both fully depleted (FD) and non-fully depleted (NFD) SOI MOSFETs. In the NFD device, other floating-body effects, some of which can be beneficial, are apparent at drain-source voltages below the breakdown because of the sensitivity of threshold voltage to the body-source bias. This bias, which can be forward or reverse in dynamic operation of the MOSFET, is due to positive or negative excess majority-carrier densities in the floating body. In this paper, we present a physical model for the NFD/SOI MOSFET and use it in a circuit simulator (SOISPICE) to identify and assess beneficial floating-body effects in dynamic operation of scaled CMOS digital circuits
Keywords :
CMOS digital integrated circuits; MOSFET; SPICE; carrier density; circuit analysis computing; integrated circuit modelling; semiconductor device models; silicon-on-insulator; SOI MOSFET; SOISPICE; Si; body-source bias; circuit simulator; dynamic floating-body effects; excess majority-carrier densities; nonfully depleted SOI CMOS circuits; parasitic-BJT breakdown; physical model; scaled CMOS digital circuits; threshold voltage; Breakdown voltage; CMOS technology; Circuit simulation; Electric breakdown; Electron devices; Inverters; MOSFETs; Notice of Violation; Semiconductor device modeling; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 1994 Proceedings., 1994 IEEE International
Conference_Location :
Nantucket, MA
Print_ISBN :
0-7803-2406-4
Type :
conf
DOI :
10.1109/SOI.1994.514238
Filename :
514238
Link To Document :
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