• DocumentCode
    235173
  • Title

    Interplay and influence of thermomechanical stress in copper-filled TSV interposers

  • Author

    Sheng-Tsai Wu ; Cheng-fu Chen ; Heng-Chieh Chien

  • Author_Institution
    Electron. & Optoelectron. Res. Lab., Ind. Technol. Res. Inst., Hsinchu, Taiwan
  • fYear
    2014
  • fDate
    27-30 May 2014
  • Firstpage
    963
  • Lastpage
    966
  • Abstract
    In this paper we use finite element simulations to determine the influence of two key design parameters on the thermomechanical stress and the stress interplay in copper-filled TSV arrays. The two parameters are the via´s pitch-to-diameter ratio and thickness-to-radius (aspect) ratio. Our analytical results has suggested that the in-plane stress interplay becomes insignificant when the TSV pitch is at least five times of the via´s radius. This criterion will be numerically verified in this paper. This work also suggests that it would be inadequate to approximate the thermomechanical stress into a simplified 2D models even for a small H/D ratio (which resembles a think, 2D-like structure).
  • Keywords
    finite element analysis; thermomechanical treatment; three-dimensional integrated circuits; TSV pitch; copper-filled TSV arrays; copper-filled TSV interposers; finite element simulations; in-plane stress interplay; pitch-to-diameter ratio; simplified 2D models; small H-D ratio; thermomechanical stress; thickness-to-radius aspect ratio; Finite element analysis; Integrated circuit modeling; Strain; Stress; Thermomechanical processes; Three-dimensional displays; Through-silicon vias;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC), 2014 IEEE 64th
  • Conference_Location
    Orlando, FL
  • Type

    conf

  • DOI
    10.1109/ECTC.2014.6897405
  • Filename
    6897405