DocumentCode
235173
Title
Interplay and influence of thermomechanical stress in copper-filled TSV interposers
Author
Sheng-Tsai Wu ; Cheng-fu Chen ; Heng-Chieh Chien
Author_Institution
Electron. & Optoelectron. Res. Lab., Ind. Technol. Res. Inst., Hsinchu, Taiwan
fYear
2014
fDate
27-30 May 2014
Firstpage
963
Lastpage
966
Abstract
In this paper we use finite element simulations to determine the influence of two key design parameters on the thermomechanical stress and the stress interplay in copper-filled TSV arrays. The two parameters are the via´s pitch-to-diameter ratio and thickness-to-radius (aspect) ratio. Our analytical results has suggested that the in-plane stress interplay becomes insignificant when the TSV pitch is at least five times of the via´s radius. This criterion will be numerically verified in this paper. This work also suggests that it would be inadequate to approximate the thermomechanical stress into a simplified 2D models even for a small H/D ratio (which resembles a think, 2D-like structure).
Keywords
finite element analysis; thermomechanical treatment; three-dimensional integrated circuits; TSV pitch; copper-filled TSV arrays; copper-filled TSV interposers; finite element simulations; in-plane stress interplay; pitch-to-diameter ratio; simplified 2D models; small H-D ratio; thermomechanical stress; thickness-to-radius aspect ratio; Finite element analysis; Integrated circuit modeling; Strain; Stress; Thermomechanical processes; Three-dimensional displays; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2014 IEEE 64th
Conference_Location
Orlando, FL
Type
conf
DOI
10.1109/ECTC.2014.6897405
Filename
6897405
Link To Document