Title :
Thickness increment of buried oxide in a SIMOX wafer by high-temperature oxidation
Author :
Nakashima, S. ; Katayama, T. ; Miyamura ; Matsuzaki, A. ; Imai, M. ; Izumi, K. ; Ohwada, N.
Author_Institution :
NTT Electron. Technol. Corp., Atsugi, Japan
Abstract :
Summary form only given. High-quality silicon oxide obtained by thermal oxidation is widely used as the gate insulator of MOSFETs. However, the electrical characteristics of the buried oxide (BOX) formed by oxygen implantation have been reported to be slightly inferior to those of thermal oxide. This paper shows that high-temperature oxidation produces internal thermal oxide (ITOX) on BOX. As a result, the total thickness of the formed buried oxide effectively increases. The buried oxide having an ITOX/BOX structure can improve its characteristics. This oxidation also reduces the microroughness of the interface between the top Si and the buried oxide
Keywords :
MOSFET; SIMOX; buried layers; ion implantation; oxidation; surface topography; MOSFETs; O ion implantation; SIMOX wafer; Si:O; buried oxide; electrical characteristics; gate insulator; high-temperature oxidation; internal thermal oxide; microroughness reduction; thickness increment; Atomic force microscopy; Electric variables; Insulation; Laboratories; Large scale integration; MOSFETs; Morphology; Oxidation; Silicon on insulator technology; Temperature;
Conference_Titel :
SOI Conference, 1994 Proceedings., 1994 IEEE International
Conference_Location :
Nantucket, MA
Print_ISBN :
0-7803-2406-4
DOI :
10.1109/SOI.1994.514251
