• DocumentCode
    2351799
  • Title

    Effects of implant angle on SIMOX structure and electrical properties of buried oxide

  • Author

    Anc, M.J. ; Krull, W.A.

  • Author_Institution
    Ibis Technol. Corp., Danvers, MA, USA
  • fYear
    1994
  • fDate
    3-6 Oct 1994
  • Firstpage
    79
  • Lastpage
    80
  • Abstract
    The approach presented by the authors revealed the effect of the implant angle on the major characteristics of SIMOX material such as thin film layer thicknesses and structure of buried oxide, pinhole density and pinhole patterns and background leakage current of the buried oxide. The obtained results show the importance of the investigated phenomena in the development of high integrity buried oxide SIMOX material and encourage further studies for the development of optimized standard and thin buried oxide SIMOX. The supporting data are presented in detail
  • Keywords
    SIMOX; buried layers; ion implantation; leakage currents; SIMOX structure; Si:O-SiO2; background leakage current; buried oxide; electrical properties; implant angle; pinhole density; pinhole patterns; thin film layer thicknesses; Conducting materials; Crystallography; Implants; Ion beams; Leakage current; Materials reliability; Monitoring; Silicon; Transmission line matrix methods; Ultra large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 1994 Proceedings., 1994 IEEE International
  • Conference_Location
    Nantucket, MA
  • Print_ISBN
    0-7803-2406-4
  • Type

    conf

  • DOI
    10.1109/SOI.1994.514255
  • Filename
    514255
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2351799