Title :
Multiple internal reflection infrared absorption spectroscopy of bonded silicon wafers
Author :
Feijóo, D. ; Chabal, Y.J. ; Christman, S.B.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
We have used infrared absorption spectroscopy to characterize an important subset of chemical species (H20, OH, Si-Hx, O-Si-H, CHx) after room temperature bonding of hydrophilic wafers. We have monitored the evolution of these species at the bonded interface as a function of annealing temperature. One important conclusion from our work is that it is necessary to anneal bonded wafers at temperatures as high as 1100 °C to eliminate Si-OH and Si-H groups from the oxide
Keywords :
annealing; elemental semiconductors; infrared spectra; infrared spectroscopy; reflectivity; silicon; silicon-on-insulator; wafer bonding; 1100 C; SOI substrates; Si-SiO2; annealing; chemical species; hydrophilic silicon wafers; interface; multiple internal reflection infrared absorption spectroscopy; oxide; wafer bonding; Annealing; Electromagnetic wave absorption; Hydrogen; Infrared spectra; Production; Reflection; Silicon; Spectroscopy; Temperature; Wafer bonding;
Conference_Titel :
SOI Conference, 1994 Proceedings., 1994 IEEE International
Conference_Location :
Nantucket, MA
Print_ISBN :
0-7803-2406-4
DOI :
10.1109/SOI.1994.514260
