• DocumentCode
    2351905
  • Title

    Multiple internal reflection infrared absorption spectroscopy of bonded silicon wafers

  • Author

    Feijóo, D. ; Chabal, Y.J. ; Christman, S.B.

  • Author_Institution
    AT&T Bell Labs., Murray Hill, NJ, USA
  • fYear
    1994
  • fDate
    3-6 Oct 1994
  • Firstpage
    89
  • Lastpage
    90
  • Abstract
    We have used infrared absorption spectroscopy to characterize an important subset of chemical species (H20, OH, Si-Hx, O-Si-H, CHx) after room temperature bonding of hydrophilic wafers. We have monitored the evolution of these species at the bonded interface as a function of annealing temperature. One important conclusion from our work is that it is necessary to anneal bonded wafers at temperatures as high as 1100 °C to eliminate Si-OH and Si-H groups from the oxide
  • Keywords
    annealing; elemental semiconductors; infrared spectra; infrared spectroscopy; reflectivity; silicon; silicon-on-insulator; wafer bonding; 1100 C; SOI substrates; Si-SiO2; annealing; chemical species; hydrophilic silicon wafers; interface; multiple internal reflection infrared absorption spectroscopy; oxide; wafer bonding; Annealing; Electromagnetic wave absorption; Hydrogen; Infrared spectra; Production; Reflection; Silicon; Spectroscopy; Temperature; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 1994 Proceedings., 1994 IEEE International
  • Conference_Location
    Nantucket, MA
  • Print_ISBN
    0-7803-2406-4
  • Type

    conf

  • DOI
    10.1109/SOI.1994.514260
  • Filename
    514260
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2351905