Title :
A model for high-field conduction in SIMOX buried oxides
Author :
Yap, Jee-Hoon ; Nee, Jocelyn ; Simic, Emilija ; Yiu, Elaine ; Yoon, Jung ; Chung, James E.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
Abstract :
High-field electrical conduction through SIMOX buried oxide exhibits distinctly different characteristics from thermal SiO2 . A quantitative model for high-field SIMOX BOX conduction is proposed which provides an explanation for both the earlier onset of BOX Fowler-Nordheim tunneling current as well as its pronounced polarity dependence. This model is based on barrier-height-lowering due to BOX silicon-rich nonstoichiometry and FN-cathode electric-field enhancement due to silicon islands within the buried oxide
Keywords :
SIMOX; buried layers; electrical conductivity; high field effects; tunnelling; Fowler-Nordheim tunneling; SIMOX BOX; Si-SiO2; barrier height; buried oxides; cathode electric-field enhancement; high-field electrical conduction; nonstoichiometry; silicon islands; Annealing; Capacitors; Data mining; Electrons; Semiconductor device modeling; Shape; Silicon; Thermal conductivity; Thermal engineering; Tunneling;
Conference_Titel :
SOI Conference, 1994 Proceedings., 1994 IEEE International
Conference_Location :
Nantucket, MA
Print_ISBN :
0-7803-2406-4
DOI :
10.1109/SOI.1994.514262
