A model for high-field conduction in SIMOX buried oxides

Author

Yap, Jee-Hoon ; Nee, Jocelyn ; Simic, Emilija ; Yiu, Elaine ; Yoon, Jung ; Chung, James E.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA

fYear

1994

fDate

3-6 Oct 1994

Firstpage

93

Lastpage

94

Abstract

High-field electrical conduction through SIMOX buried oxide exhibits distinctly different characteristics from thermal SiO₂. A quantitative model for high-field SIMOX BOX conduction is proposed which provides an explanation for both the earlier onset of BOX Fowler-Nordheim tunneling current as well as its pronounced polarity dependence. This model is based on barrier-height-lowering due to BOX silicon-rich nonstoichiometry and FN-cathode electric-field enhancement due to silicon islands within the buried oxide

Keywords

SIMOX; buried layers; electrical conductivity; high field effects; tunnelling; Fowler-Nordheim tunneling; SIMOX BOX; Si-SiO₂; barrier height; buried oxides; cathode electric-field enhancement; high-field electrical conduction; nonstoichiometry; silicon islands; Annealing; Capacitors; Data mining; Electrons; Semiconductor device modeling; Shape; Silicon; Thermal conductivity; Thermal engineering; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1994 Proceedings., 1994 IEEE International

Conference_Location

Nantucket, MA

Print_ISBN

0-7803-2406-4

Type

conf

DOI

10.1109/SOI.1994.514262

Filename

514262