• DocumentCode
    2352004
  • Title

    Lateral carrier-domain magnetometer fabricated on BESOI

  • Author

    Lau, Jack ; Ko, Ping K. ; Chan, Philip C.H. ; Nguyen, Cuong T.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong
  • fYear
    1994
  • fDate
    3-6 Oct 1994
  • Firstpage
    103
  • Lastpage
    104
  • Abstract
    Most high sensitivity magnetic sensors can not be readily integrated using conventional IC technology. The authors report a lateral carrier domain magnetometer (LCDM) which takes advantage of the superior isolation property of the SOI technology. The LCDM, based on a combination of carrier domain effect, positive feedback, and Lorentz deflection, is fabricated on BESOI
  • Keywords
    isolation technology; magnetic sensors; magnetometers; semiconductor technology; silicon-on-insulator; BESOI; Lorentz deflection; SOI technology; carrier domain effect; high sensitivity magnetic sensors; isolation property; lateral carrier domain magnetometer; positive feedback; Application software; Back; Gaussian processes; Isolation technology; Lifting equipment; Magnetic field measurement; Magnetic sensors; Magnetometers; Medical simulation; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 1994 Proceedings., 1994 IEEE International
  • Conference_Location
    Nantucket, MA
  • Print_ISBN
    0-7803-2406-4
  • Type

    conf

  • DOI
    10.1109/SOI.1994.514267
  • Filename
    514267
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2352004