Title :
Nano-defects in commercial bonded SOI and SIMOX
Author :
Sadana, D.K. ; Lasky, J. ; Hovel, H.J. ; Petrillo, K. ; Roitman, P.
Author_Institution :
SRDC, IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
Two new classes of defects have been identified in commercial SIMOX, plasma thinned BSOI and BESOI materials. The first class of defects are revealed when the materials are treated in concentrated HF, and their density is in the range 102-103 cm-2. The second class of defects appear when the materials are etched by the enhanced Secco etch method. Contrary to the common belief defect densities of 104-105 cm-2 are present in both plasma thinned BSOI and BESOI after Secco etching. The defect densities in SIMOX after the Secco etching were 106-107 cm-2 which was expected
Keywords :
SIMOX; dislocation density; silicon-on-insulator; sputter etching; voids (solid); BESOI materials; SIMOX; bonded SOI; defect densities; enhanced Secco etch method; nanodefects; plasma thinned BSOI; Bonding; Etching; Fabrication; Hafnium; Optical materials; Optical microscopy; Plasma applications; Plasma density; Plasma materials processing; Scanning electron microscopy;
Conference_Titel :
SOI Conference, 1994 Proceedings., 1994 IEEE International
Conference_Location :
Nantucket, MA
Print_ISBN :
0-7803-2406-4
DOI :
10.1109/SOI.1994.514271
